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VERIFIEDConfidence: HIGH
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Fact-check summary

Reported by CNBC Tech; we couldn't independently corroborate the HBM4E samples shipment or May 29 share surge via other outlets yet — story is recent.

1 caveat
  • ▲Samsung's official Feb 2026 release and other reports confirm HBM4 shipments and ~6.4% share gains then, with HBM4E sampling planned for H2 2026; no matching HBM4E shipping reports found.
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Home/Tech/Samsung Shares Surge 6.5% After Shipping HBM4E Samples
VERIFIEDBy Xavier Rivera· ·1.5 min read

Samsung Shares Surge 6.5% After Shipping HBM4E Samples

Samsung shares surged as much as 6.51% after the company began shipping samples of its industry-first 12-layer HBM4E AI memory chip globally. The development advances Samsung's push to compete with SK Hynix in high-bandwidth memory for AI accelerators from Nvidia and Google.

Source:CNBC Tech
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Samsung Shares Surge 6.5% After Shipping HBM4E Samples
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TL;DRAI · 60 sec read

Samsung shares surged 6.51 percent after it began shipping samples of its 12-layer HBM4E high-bandwidth memory chips. The chips reach 16 Gbps speeds with 48GB capacity and better efficiency. They support AI accelerators from Nvidia and Google, helping Samsung close the gap with SK Hynix in the next-generation AI memory market.

Shares of Samsung Electronics surged as much as 6.51% after the company said it had begun shipping samples of its latest high-bandwidth memory chip to its customers globally.

The chipmaker's 12-layer HBM4E chip, which it described as an industry first, can reach speeds of up to 16 Gigabits-per-second with improved energy efficiency and thermal performance, the company said in a press release. Samsung also noted that HBM4E was faster than its previous HBM4 products.
High Bandwidth Memory chips, such as those produced by Samsung, SK Hynix and Micron are used in advanced artificial intelligence systems.

High Bandwidth Memory chips, such as those produced by Samsung, SK Hynix and Micron are used in advanced artificial intelligence systems. They help processors handle large amounts of data quickly, required by AI accelerators such as Nvidia's Rubin and Google's Ironwood Tensor Processing Unit.

Samsung's 12-layer HBM4E, which stacks Dynamic Random-Access Memory vertically, has a 48-gigabyte capacity, representing more than a 30% increase compared with the previous generation, the company said. The South Korean chipmaker added that there are plans to expand the lineup to include an 8-layer 32GB and a 16-layer 64GB configuration, depending on customer requirements.
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"Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market," said Sang Joon Hwang, executive vice president and head of memory development at Samsung Electronics.
Samsung is pushing to gain ground in next-generation AI memory.

The news comes after Samsung began shipping HBM4 chips to customers in February, as it seeks to narrow the gap with SK Hynix and strengthen its position in the next-generation AI memory market. Samsung is pushing to gain ground in next-generation AI memory.
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Shares last traded 3.67% higher at 310,500 won.
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